Ferroelectric Bi4Ti3O12 thin films are deposited on Pt/Ti/Si(100) substrates by rf magnetron
sputtering at room temperature. The films are then heated by a rapid thermal annealing (RTA) process conducted in oxygen atmosphere at temperatures ranging from 500℃-700℃. X-ray diffraction examination reveals that the crystalline of the films annealed on 700℃ is better than that of the films annealed on 500℃under the RTA process. Finally, the top view and cross-sectional images of SEM, memory windows, leakage currents and polarization characteristics of the Bi4Ti3O12 thin films would be discussed.