Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN

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題名:	Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN
作者:	Liu, Kuan-Ting Chang, Shoou-Jinn Wu, Sean 吳信賢 (東方技術學院電子與資訊系)
貢獻者:	東方技術學院電子與資訊系
日期:	2009-08
上傳時間:	2012-10-25 14:40:24 (UTC+8)
摘要:	The effects of phosphorus implantation on the activation of magnesium doped in GaN at different dopant concentration ratios have been systematically investigated. Hall effect measurements show that P implantation improves the hole concentration, and that this improvement is dependent on P/Mg dopant concentration ratio and annealing conditions. This phenomenon is attributable to the reduction in self-compensation that results from the formation of deep donors and the enhanced Mg atom activation, which is in reasonable agreement with the optical properties observed by photoluminescence measurements. In addition, a new photoluminescence peak resulting from P-related transitions is also observed, evidently owing to the recombination of electrons from the shallow native donors with holes previously captured by isoelectronic P traps.
關聯:	Japanese Journal of Applied Physics, Vol.48 no.8
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