The Structural and optical properties of ZnO/Si thin films by RTA treatments

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Please use this identifier to cite or link to this item: http://163.15.40.127/ir/handle/987654321/1001

Title:	The Structural and optical properties of ZnO/Si thin films by RTA treatments
Authors:	胡勝耀 Hu, S.Y. Lee, Y.C. Leec, J.W. Huang, J.C. Shen, J.L. Water, W. (東方技術學院電機工程系)
Contributors:	東方技術學院電機工程系
Keywords:	ZnO thin films Rapid thermal annealing photoluminescence
Date:	2008-01
Issue Date:	2010-12-24 15:10:44 (UTC+8)
Abstract:	ZnO/Si thin films were prepared by rf magnetron sputtering method and some of the samples were treated by rapid thermal annealing (RTA) process at different temperatures ranging from 400 to 800 °C. The effects of RTA treatment on the structural properties were studied by using X-ray diffraction and atomic force microscopy while optical properties were studied by the photoluminescence measurements. It is observed that the ZnO film annealed at 600 °C reveals the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied. The enhanced UV emission from the film annealed at 600 °C is attributed to the improved crystalline quality of ZnO film due to the effective relaxation of residual compressive stress and achieving maximum grain size.
Relation:	Applied Surface Science, Vol. 254, No. 6, pp. 1578-1582
Appears in Collections:	[Department of Electrical Engineering] journal

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